Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixe...

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Bibliographic Details
Published in:AIP advances 2015-06, Vol.5 (6), p.067113-067113-10
Main Authors: Batra, Neha, Gope, Jhuma, Vandana, Panigrahi, Jagannath, Singh, Rajbir, Singh, P. K.
Format: Article
Language:English
Subjects:
Aluminum oxide
Deposition
Passivity
Silicon
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Summary:The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, QF. The interface defect density (Dit) decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4922267