CMOS-SOI-MEMS Uncooled Infrared Security Sensor With Integrated Readout

A new generation of uncooled passive infrared (PIR) security sensors based on a suspended thermal transistor MOS (TMOS), fabricated in standard CMOS-SOI process, released by post-etching, and wafer level packaged achieving a vacuum of

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2016-05, Vol.4 (3), p.155-162
Main Authors: Saraf, Tomer, Brouk, Igor, Bar-Lev Shefi, Sharon, Unikovsky, Aharon, Blank, Tanya, Radhakrishnan, Praveen Kumar, Nemirovsky, Yael
Format: Article
Language:English
Subjects:
Infrared detectors
Integrated circuits
Security
Semiconductor devices
Sensor arrays
Thermal sensors
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Description
Summary:A new generation of uncooled passive infrared (PIR) security sensors based on a suspended thermal transistor MOS (TMOS), fabricated in standard CMOS-SOI process, released by post-etching, and wafer level packaged achieving a vacuum of
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2016.2539980