Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range

A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence of carrier concentration-depen...

Full description

Saved in:
Bibliographic Details
Published in:Micromachines (Basel) 2022-10, Vol.13 (11), p.1828
Main Authors: Martínez-Revuelta, Rubén, Solís-Cisneros, Horacio I., Trejo-Hernández, Raúl, Pérez-Patricio, Madaín, Paniagua-Chávez, Martha L., Grajales-Coutiño, Rubén, Camas-Anzueto, Jorge L., Hernández-Gutiérrez, Carlos A.
Format: Article
Language:English
Subjects:
Absorbers
Alloys
Carrier density
Efficiency
Energy conversion efficiency
Energy gap
Energy use
Gallium nitrate
graded layers
Indium
InGaN
Photoelectric effect
Photovoltaic cells
Piezoelectricity
Simulation
simulation analysis
solar cell
Solar cells
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence of carrier concentration-dependent mobility on the absorber layer has been studied, obtaining considerable improvements in efficiency and photocurrent density. Efficiency over the tandem solar cell theoretical limit has been reached. A current density of 52.95 mA/cm2, with an efficiency of over 85%, is determined for a PiN structure with an InGaN step-graded bandgap absorption layer and 65.44% of power conversion efficiency for the same structure considering piezoelectric polarization of fully-strained layers and interfaces with electron and hole surface recombination velocities of 10−3 cm/s.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi13111828