A 53-µA-Quiescent 400-mA Load Demultiplexer Based CMOS Multi-Voltage Domain Low Dropout Regulator for RF Energy Harvester

A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current...

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Bibliographic Details
Published in:Micromachines (Basel) 2023-02, Vol.14 (2), p.379
Main Authors: Poongan, Balamahesn, Rajendran, Jagadheswaran, Yizhi, Li, Mariappan, Selvakumar, Parameswaran, Pharveen, Kumar, Narendra, Othman, Masuri, Nathan, Arokia
Format: Article
Language:English
Subjects:
bandgap voltage reference
Circuit design
CMOS
Complementary metal oxide semiconductors
Current efficiency
Demultiplexers
Design and construction
Domains
Efficiency
Electric current regulators
Electric potential
Energy harvesting
Integrated circuits
Internet of Things
Methods
multi-voltage domain low dropout
power management unit
radio frequency energy harvester
Sensors
system on chip
Transistors
Voltage
Voltage regulators
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Summary:A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current efficiency of 99.98% with quiescent current of 53 µA with the aid of an integrated low-power demultiplexer controller which consumes only 68.85 pW. The fabricated chip has an area of 0.149 mm and can deliver up to 400 mA of current. The MVD-LDO's line and load regulations are 1.85 mV/V and 0.0003 mV/mA for the low-output voltage domain and 3.53 mV/V and 0.079 mV/mA for the high-output voltage domain. The LDO consumes only 174.5 µW in standby mode, making it suitable for integrating with an RF energy harvester chip to power sensor nodes.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi14020379