Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface

• Published in: Nature communications 2023-05, Vol.14 (1), p.2871-2871, Article 2871
• Main Authors: Wang, Mengxi, Zhou, Jun, Xu, Xiaoguang, Zhang, Tanzhao, Zhu, Zhiqiang, Guo, Zhixian, Deng, Yibo, Yang, Ming, Meng, Kangkang, He, Bin, Li, Jialiang, Yu, Guoqiang, Zhu, Tao, Li, Ang, Han, Xiaodong, Jiang, Yong
• Format: Article
• Language: English
• Subjects: 119/118; 147/143; 147/3; 639/301/357/997; 639/766/1130/2798; 639/925/927/1062; Antiferromagnetism; Compressive properties; Electrons; Energy efficiency; Ferromagnetism; Heavy metals; Heterostructures; Humanities and Social Sciences; Insulation; Magnetic fields; Magnetic switching; Magnetization; multidisciplinary; Nickel oxides; Polarization; Polarization (spin alignment); Science; Science (multidisciplinary); Spintronics; Substrates; Tantalum; Torque
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-023-38550-1

Manipulating spin polarization orientation is challenging but crucial for field-free spintronic devices. Although such manipulation has been demonstrated in a limited number of antiferromagnetic metal-based systems, the inevitable shunting effects from the metallic layer can reduce the overall device efficiency. In this study, we propose an antiferromagnetic insulator-based heterostructure NiO/Ta/Pt/Co/Pt for such spin polarization control without any shunting effect in the antiferromagnetic layer. We show that zero-field magnetization switching can be realized and is related to the out-of-plane component of spin polarization modulated by the NiO/Pt interface. The zero-field magnetization switching ratio can be effectively tuned by the substrates, in which the easy axis of NiO can be manipulated by the tensile or compressive strain from the substrates. Our work demonstrates that the insulating antiferromagnet based heterostructure is a promising platform to enhance the spin-orbital torque efficiency and achieve field-free magnetization switching, thus opening an avenue towards energy-efficient spintronic devices. Electrically switching perpendicular magnetized ferromagnets using spin-orbit torques without assisting magnetic fields is a major goal for spintronics. Recently, several works have proposed using out-of-plane spin polarized currents to achieve this, but these rely on antiferromagnetic metals with low Neel temperatures. Here, Wang et al show that such out-of-plane spin polarization driven switching can be achieved using the interface of an antiferromagnetic insulator and a heavy metal.