An Analytical Model for the Gate C-V Characteristics of UTB III-V-on-Insulator MIS Structure

We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III - V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel mat...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2017-09, Vol.5 (5), p.335-339
Main Authors: Islam, Muhammad Mainul, Kutubul Alam, Md Nur, Sarker, Md Shamim, Islam, Md Rafiqul, Haque, Anisul
Format: Article
Language:English
Subjects:
Analytical models
compact model
Electric potential
Field effect transistors
Gate capacitance
III-V-on-insulator
Logic gates
Mathematical model
Numerical models
XOI
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Summary:We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III - V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel materials.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2017.2725340