Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

Memory devices with bilayer CeO 2−x /ZnO and ZnO/CeO 2−x heterostructures sandwiched between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at room temperature. N-type semiconductor materials were used in both device heterostructures, but interestingly, change in heterost...

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Bibliographic Details
Published in:Nanoscale research letters 2018-10, Vol.13 (1), p.1-10, Article 318
Main Authors: Ismail, Muhammad, Talib, Ijaz, Rana, Anwar Manzoor, Akbar, Tahira, Jabeen, Shazia, Lee, Jinju, Kim, Sungjun
Format: Article
Language:English
Subjects:
Bilayers
Cerium oxide
Cerium oxides
Chemistry and Materials Science
Conduction
Conduction mechanism
Effect of polarity
Electroforming
Endurance
Filaments
Heterostructure
Heterostructures
High resistance
Interfaces
Low resistance
Magnetron sputtering
Materials Science
Memory devices
Molecular Medicine
N-type semiconductors
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Photovoltaic cells
Polarity
Resistive switching
Schottky emission
Semiconductor materials
Switching
Temperature dependence
Zinc oxide
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Summary:Memory devices with bilayer CeO 2−x /ZnO and ZnO/CeO 2−x heterostructures sandwiched between Ti top and Pt bottom electrodes were fabricated by RF-magnetron sputtering at room temperature. N-type semiconductor materials were used in both device heterostructures, but interestingly, change in heterostructure and electroforming polarity caused significant variations in resistive switching (RS) properties. Results have revealed that the electroforming polarity has great influence on both CeO 2−x /ZnO and ZnO/CeO 2−x heterostructure performance such as electroforming voltage, good switching cycle-to-cycle endurance (~ 10 2 ), and ON/OFF ratio. A device with CeO 2−x /ZnO heterostructure reveals good RS performance due to the formation of Schottky barrier at top and bottom interfaces. Dominant conduction mechanism of high resistance state (HRS) was Schottky emission in high field region. Nature of the temperature dependence of low resistance state and HRS confirmed that RS is caused by the formation and rupture of conductive filaments composed of oxygen vacancies.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-018-2738-4