Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

In this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga nanowire arrays have been realized. Ga nanowires were obtained by thermally o...

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Bibliographic Details
Published in:Nanophotonics (Berlin, Germany) Germany), 2018, Vol.7 (9), p.1557-1562
Main Authors: He, Tao, Zhao, Yukun, Zhang, Xiaodong, Lin, Wenkui, Fu, Kai, Sun, Chi, Shi, Fengfeng, Ding, Xiaoyu, Yu, Guohao, Zhang, Kai, Lu, Shulong, Zhang, Xinping, Zhang, Baoshun
Format: Article
Language:English
Subjects:
Arrays
Epitaxial growth
Gallium oxides
Graphene
heterojunction
Heterojunctions
Molecular beam epitaxy
nanowire arrays
Nanowires
Oxidation
photodetectors
Photometers
Silicon substrates
thermal oxidation
Ultraviolet detectors
vertical Ga
vertical ga2o3 nanowire arrays
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Summary:In this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga nanowire arrays have been realized. Ga nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga nanowires to form the graphene/vertical Ga nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×10 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga nanowire array heterojunction structure.
ISSN:2192-8606
2192-8614
DOI:10.1515/nanoph-2018-0061