Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In 2 Se 3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In 2 Se 3 based field...

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Bibliographic Details
Published in:NPJ 2D materials and applications 2021-09, Vol.5 (1), p.1-8, Article 81
Main Authors: Dutta, Debopriya, Mukherjee, Subhrajit, Uzhansky, Michael, Koren, Elad
Format: Article
Language:English
Subjects:
639/301/357/1018
639/925/927/1007
Asymmetry
Chemistry and Materials Science
Dipoles
Electric fields
Electrodes
Ferroelectricity
Locking
Materials Science
Microscopy
Modulation
Nanotechnology
Optical memory (data storage)
Optoelectronic devices
Photoelectric effect
Photoelectric emission
Surfaces and Interfaces
Thin Films
Topography
Transistors
Voltage pulses
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Summary:The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In 2 Se 3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In 2 Se 3 based field-effect devices. Surface potential measurements of In 2 Se 3 based devices directly reveal the bidirectional dipole locking following high gate voltage pulses. The experimental evidence of hysteretic change in the IP electrical field facilitating a nonvolatile memory switch, was further explored by performing photocurrent measurements. Fabricated photodetectors presented multilevel photocurrent characteristics showing promise for nonvolatile memory and electro-optical applications.
ISSN:2397-7132
2397-7132
DOI:10.1038/s41699-021-00261-w