Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. Under the off-state stress condition, Pt/Ti/Pt/Au HEMT showed abruptly reduced...

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Bibliographic Details
Published in:Micromachines (Basel) 2022-01, Vol.13 (1), p.84
Main Authors: Chakraborty, Surajit, Kim, Tae-Woo
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitrides
Contact stresses
critical voltage
degradation
Etching
Gallium nitrides
Gold
High electron mobility transistors
high temperature
Interface stability
inverse piezoelectric effect
Leakage current
Metals
off-state stress
Organic chemicals
Piezoelectricity
Platinum
Reliability analysis
Semiconductor devices
Stability analysis
Transistors
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Summary:The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. Under the off-state stress condition, Pt/Ti/Pt/Au HEMT showed abruptly reduced reverse leakage current, which improved the Schottky barrier height (SBH) from 0.46 to 0.69 eV by suppression of the interfacial donor state. As the temperature increased, the reverse leakage current of the Pt/Ti/Pt/Au AlGaN/GaN HEMT at 308 K showed more reduction under the same off-state stress condition while that of the Ni/Au AlGaN/GaN HEMT increased. However, with temperatures exceeding 308 K under the same off-state stress conditions, the reverse leakage current of the Pt/Ti/Pt/Au AlGaN/GaN HEMT increases, which can be intensified using the inverse piezoelectric effect. Based on this phenomenon, the present work reveals the necessity for analyzing the concurrent SBH and reliability instability due to the interfacial trap states of the MS contacts.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi13010084