Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses

Owing to the rapid development of wireless communication, radar and pulse power technology, the electromagnetic environment faced by electronic systems is increasingly complex and the intensity of electromagnetic field can be significant. In this study, a new interference phenomenon was observed whe...

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Bibliographic Details
Published in:Scientific reports 2022-10, Vol.12 (1), p.16922-16922, Article 16922
Main Authors: Zhao, Jingtao, Chen, Quanyou, Chen, Chaoyang, Chen, Zhidong, Liu, Zhong, Zhao, Gang
Format: Article
Language:English
Subjects:
639/766/1130
639/766/25
Antennas
Electromagnetic fields
Engineering
Experiments
Gallium
Humanities and Social Sciences
Laboratories
Mobility
multidisciplinary
Physics
Point defects
Radar
Science
Science (multidisciplinary)
Transistors
Wireless communications
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Summary:Owing to the rapid development of wireless communication, radar and pulse power technology, the electromagnetic environment faced by electronic systems is increasingly complex and the intensity of electromagnetic field can be significant. In this study, a new interference phenomenon was observed when the microwave pulses were injected into the gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier through the output port. We investigated the relationship between the peak power of reverse injection microwave pulses and the duration or the amplitude of the interference by effect experiments. The interference duration could reach the magnitude of millisecond. Deep traps in GaN HEMT power amplifiers are proved to be the cause of this interference effects.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-022-21324-y