Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide

The ceramic target of Indium tinoxide (ITO) (90% In2O3-10%SnO2) has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power v...

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Bibliographic Details
Published in:International journal of photoenergy 2011-01, Vol.2011 (2011), p.1-6
Main Authors: Kashyout, Abd El-Hady B., Soliman, Moataz B., Fathy, Marwa
Format: Article
Language:English
Subjects:
Atomic force microscopy
Atomic structure
Deposition
Grain size
Heat resistance
Indium tin oxide
Magnetron sputtering
Organic light emitting diodes
Plasma
Polyethylene terephthalate
Radio frequencies
Scanning electron microscopy
Thin films
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Summary:The ceramic target of Indium tinoxide (ITO) (90% In2O3-10%SnO2) has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222) and (400) of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about 1.62×10−4 Ω⋅cm.
ISSN:1110-662X
1687-529X
DOI:10.1155/2011/139374