A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing

The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, ener...

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Bibliographic Details
Published in:Scientific reports 2021-11, Vol.11 (1), p.22915-22915, Article 22915
Main Authors: Popa, Daniel, Hopper, Richard, Ali, Syed Zeeshan, Cole, Matthew Thomas, Fan, Ye, Veigang-Radulescu, Vlad-Petru, Chikkaraddy, Rohit, Nallala, Jayakrupakar, Xing, Yuxin, Alexander-Webber, Jack, Hofmann, Stephan, De Luca, Andrea, Gardner, Julian William, Udrea, Florin
Format: Article
Language:English
Subjects:
639/166/987
639/301/1005/1009
639/301/357/73
639/301/930/527/2257
692/700/784
704/172/4081
Emissivity
Energy efficiency
Fabrication
High temperature
Humanities and Social Sciences
Light sources
Microelectromechanical systems
multidisciplinary
Science
Science (multidisciplinary)
Sensors
Spectroscopy
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Summary:The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 ∘ C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 ∘ C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-02121-5