Strong-field-induced attosecond dynamics in SiO2

Striking field-induced changes in the absorption near the Si L-edge of SiO2 exposed to a near-infrared laser field of several V/Å delivered by a few-cycle pulse are observed with sub-100 attosecond extreme ultraviolet pulses by means of attosecond transient absorption.

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Bibliographic Details
Main Authors: Kienberger R., Apalkov V., Hofstetter M., Fiess M., Holzner S., Bothschafter E. M., Sommer A., Schultze M., Yakovlev V.S., Stockman M. I., Krausz F.
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Description
Summary:Striking field-induced changes in the absorption near the Si L-edge of SiO2 exposed to a near-infrared laser field of several V/Å delivered by a few-cycle pulse are observed with sub-100 attosecond extreme ultraviolet pulses by means of attosecond transient absorption.
ISSN:2100-014X
DOI:10.1051/epjconf/20134102014