10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite di...

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Bibliographic Details
Published in:Frontiers in physics 2021-05, Vol.9
Main Authors: Byers, James, Debnath, Kapil, Arimoto, Hideo, Husain, Muhammad K., Sotto, Moïse, Hillier, Joseph, Kiang, Kian, Thomson, David J., Reed, Graham T., Charlton, Martin, Saito, Shinichi
Format: Article
Language:English
Subjects:
anisotropic wet etching
double-SOI
misaligned photonic crystal
polarization conversion
silicon photonics
slot-mode
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Summary:In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO 2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications.
ISSN:2296-424X
2296-424X
DOI:10.3389/fphy.2021.659585