Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra...

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Bibliographic Details
Published in:AIP advances 2015-08, Vol.5 (8), p.087103-087103-7
Main Authors: Xu, Hao, Song, Yuxin, Pan, Wenwu, Chen, Qimiao, Wu, Xiaoyan, Lu, Pengfei, Gong, Qian, Wang, Shumin
Format: Article
Language:English
Subjects:
Bismuth tellurides
Molecular beam epitaxy
Raman spectra
Raman spectroscopy
Silicon substrates
Spectroscopic analysis
Spectrum analysis
Tensors
Thermoelectric materials
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Summary:Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4928217