Design, Construction and Programming of a Low-Cost Pulsed High-Voltage Direct Current Power Supply for the Electrophoretic Deposition of Silicon Carbide Mixed with Graphite and/or Alumina for Thermoelectric Applications

• Published in: Inventions (Basel) 2024-04, Vol.9 (2), p.40
• Main Authors: Reyes Valdez, Juan Jesús, De la Cruz Terrazas, Edna Carina, Rodríguez González, Eugenio
• Format: Article
• Language: English
• Subjects: Alternative energy sources; Aluminum oxide; Capacitors; Circuits; Conductivity; Diodes; Direct current; Efficiency; Electric properties; Electric transformers; Electrical conductivity; electrical properties; Electrical resistivity; Electrophoretic deposition; Figure of merit; Graphite; Heat conductivity; Heat transfer; Heat treatment; High voltages; Low cost; Power electronics; Power supply; pulsed high voltage direct current; Raman spectroscopy; Renewable resources; Seebeck effect; Silicon; Silicon carbide; Temperature; Thermal conductivity; Thermoelectricity
• ISSN: 2411-5134; 2411-5134
• DOI: 10.3390/inventions9020040

This document describes a proprietary design, construction, programming and testing of a low-cost pulsed high-voltage direct current (HVDC) power supply with an output of 430 V and power of 25 W. The design obtained allows costs to be reduced compared to commercial ones, highlighting that the manufacturing of this HVDC is easy to replicate. To demonstrate the operation of the pulsed power supply prototype, coatings of silicon carbide (SiC) and SiC mixed with graphite (C) and/or alumina (Al2O3) were made using the electrophoretic deposition (EPD) method. After processing, samples underwent a heat treatment at 500 °C to evaluate their thermoelectric (TE) efficiency. The samples were analysed via X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, Seebeck coefficient, electrical conductivity and thermal conductivity. The Seebeck coefficient, electrical conductivity and thermal conductivity were measured in a temperature range of 100–500 °C in a nitrogen (N2) atmosphere. The electrical conductivity of the SiC 6C-4Al sample was 0.65 S/cm at 500 °C, while the maximum Seebeck coefficient was 2500 μV/K of the SiC 6C-4Al sample at 200 °C. The thermal conductivity of SiC 6C-4Al was in the range of 0.35–0.37 W/m·K, which was much lower than the SiC sample free of alumina and graphite in the same measured temperature range. In conclusion, the SiC 6C-4Al sample presented the highest figure of merit with a ZT ≈ 0.01.