In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2021-01, Vol.11 (1), p.126
Main Authors: Soopy, Abdul Kareem K, Li, Zhaonan, Tang, Tianyi, Sun, Jiaqian, Xu, Bo, Zhao, Chao, Najar, Adel
Format: Article
Language:English
Subjects:
Epitaxial growth
Epitaxy
Etching
GaN
Gas sensors
InGaN
Lasers
Light emitting diodes
Molecular beam epitaxy
Morphology
Nanoparticles
Nanostructure
Nanowires
Nitrides
Organic chemicals
photochemical etch
Photochemicals
Review
Semiconductors
Substrates
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Description
Summary:This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11010126