Low-Temperature Direct Bonding of SiC to Si via Plasma Activation

We investigated the low-temperature direct bonding of SiC/Si via O2 plasma activation. After optimization, a high bonding efficiency of over 90% was obtained. Surface activation was achieved via reactive ion etching (RIE) O2 plasma for 30 s without significant bombardment damage. A smooth and void-f...

Full description

Saved in:
Bibliographic Details
Published in:Applied sciences 2022-04, Vol.12 (7), p.3261
Main Authors: Wang, Fengxuan, Yang, Xiang, Zhao, Yongqiang, Wu, Jingmin, Guo, Zhiyu, He, Zhi, Fan, Zhongchao, Yang, Fuhua
Format: Article
Language:English
Subjects:
Annealing
Bonding
bonding interface
Chemical bonds
direct bonding
Efficiency
Electron bombardment
Etching
Experiments
Influence
Ion bombardment
Low temperature
Microelectromechanical systems
Microscopy
Optimization
Oxidation
plasma activation
Plasma etching
Reactive ion etching
Silicon carbide
Spectrum analysis
Surface activation
Transmission electron microscopy
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated the low-temperature direct bonding of SiC/Si via O2 plasma activation. After optimization, a high bonding efficiency of over 90% was obtained. Surface activation was achieved via reactive ion etching (RIE) O2 plasma for 30 s without significant bombardment damage. A smooth and void-free interface was observed by transmission electron microscopy (TEM), while a significant amorphous oxide layer was also detected. By increasing the annealing temperature from 150 to 300 ∘C, the amorphous layer decreased drastically from 48 nm to 11 nm. Based on systematic experiments and analysis, the mechanism of SiC/Si low-temperature plasma-activated bonding was discussed.
ISSN:2076-3417
2076-3417
DOI:10.3390/app12073261