An influence of polyHEMA gate layer on properties of ChemFETs

A complex deposition procedure of the hydrogel layer of modified poly(2-hydroxyethyl methacrylate) (polyHEMA) covalently linked to the silicon nitride surface and covering only the gate area of the ISFET, was optimized for photolithographic technology, using standard silicon wafers of 3” diameter. T...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2003-06, Vol.3 (6), p.146-159
Main Authors: Dawgul, Marek, Pijanowska, Dorota G., Krzyskow, Alfred, Kruk, Jerzy, Torbicz, Wladyslaw
Format: Article
Language:English
Subjects:
Biomedical engineering
Hydration
hydrogel buffering layer
Hydrogels
Ion-sensitive field-effect transistor(ISFET)
Membranes
Nitrogen
Photolithography
Poly(2-hydroxyethyl methacrylate)
Power supply
Sensors
Silicon nitride
Silicon wafers
Transistors
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Summary:A complex deposition procedure of the hydrogel layer of modified poly(2-hydroxyethyl methacrylate) (polyHEMA) covalently linked to the silicon nitride surface and covering only the gate area of the ISFET, was optimized for photolithographic technology, using standard silicon wafers of 3” diameter. The influence of hydrogel composition and layer thickness on the sensors’ parameters was investigated. It was shown, that ISFETs covered with more than 100 μm thick polyHEMA layers in restricted pH-range could be practically insensitive to pH. Regarding mechanical stability of ion-selective sensors, a polyHEMA layer of ca. 20 μm thickness was found to be the best suitable for further manufacturing of durable ion selective sensors (Chemically modified Field-Effect Transistors – ChemFETs). The weak buffering properties of the thin polyHEMA layers had no disadvantageous influence on the sensors’ function.
ISSN:1424-8220
1424-8220
DOI:10.3390/s30600146