Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silic...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2011-02, Vol.11 (2), p.1321-1327
Main Authors: Vashpanov, Yuriy, Jung, Jae Il, Kwack, Kae Dal
Format: Article
Language:English
Subjects:
Adsorption
Adsorption - radiation effects
Aluminum
Ammonia
Ammonia - analysis
Crystallization
Electrochemical Techniques - instrumentation
Electrochemical Techniques - methods
Etching
gas sensors
Gases
heterojunction
Light
Nanowires
Nanowires - chemistry
Nitrogen
Nitrogen - analysis
photo-EMF
Porosity - radiation effects
porous silicon
Sensors
Silicon - chemistry
Silicon wafers
Thermodynamics
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Summary:A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.
ISSN:1424-8220
1424-8220
DOI:10.3390/s110201321