Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations

Boron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 [Omega].cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrol...

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Bibliographic Details
Published in:Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 2015-11, Vol.18 (6), p.1407-1413
Main Authors: Silva, Lilian Mieko da, Santos, Marta dos, Baldan, Maurício Ribeiro, Beloto, Antonio Fernando, Ferreira, Neidenêi Gomes
Format: Article
Language:English
Subjects:
Boron
boron doped ultrananocrystalline diamond films
Capacitance
Carbon
electrochemical application
Electrodes
ENGINEERING, CHEMICAL
Filaments
Hafnium
MATERIALS SCIENCE, MULTIDISCIPLINARY
METALLURGY & METALLURGICAL ENGINEERING
Methyl alcohol
Porous silicon
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Summary:Boron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 [Omega].cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrolyte. BDUND films were grown by Hot Filament Chemical Vapor Deposition using CH sub(4), H sub(2) and Ar. The doping process consisted of an additional hydrogen line, passing through a bubbler containing B sub(2) O sub(3) dissolved in methanol, with boron/carbon ratio of 20000 ppm in solution. Raman spectroscopy and X-Ray diffraction were used to evaluate the quality of the films. Scanning electron microscopy was used for morphological characterization, and confirmed that the films covered the pores without filling them. Electrochemical response and capacitance behavior of the electrodes were explored, by cyclic voltammetry. Samples presented high capacitance, confirming that BDUND/PS electrodes are promising for application as electrochemical capacitors.
ISSN:1516-1439
1980-5373
1980-5373
DOI:10.1590/1516-1439.002715