Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity

The electrical properties of polycrystalline Ge2Sb2Te5 thin films containing both the metastable fcc phase and the stable hcp phase have been studied. The resistivity and its temperature dependence have been modelled using effective medium approximation. By varying the volume fraction of the two pha...

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Published in:AIP advances 2013-01, Vol.3 (1), p.012105-012105
Main Authors: Privitera, S., Garozzo, C., Alberti, A., Perniola, L., De Salvo, B.
Format: Article
Language:English
Subjects:
Approximation
Close packed lattices
Discontinuity
Electrical properties
Electrical resistivity
Hexagonal cells
Mathematical analysis
Thin films
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description The electrical properties of polycrystalline Ge2Sb2Te5 thin films containing both the metastable fcc phase and the stable hcp phase have been studied. The resistivity and its temperature dependence have been modelled using effective medium approximation. By varying the volume fraction of the two phases it is possible to get films with different resistivities and temperature coefficient of resistance, changing without discontinuity from negative (fcc) to positive value (hcp). Mixed phase films with resistivity almost independent of the temperature are obtained at about 4 mΩ cm.
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subjects Approximation
Close packed lattices
Discontinuity
Electrical properties
Electrical resistivity
Hexagonal cells
Mathematical analysis
Thin films
title Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity
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