Morphology and composition of silica nanowires synthesized on indium and tin catalysts

Silicon nanowires were synthesized by electron beam plasmaenhanced chemical vapor deposition. The synthesis was carried out using indium and tin catalyst with an average particle size of 100 and 660 nm, respectively, in the temperature range 100-270 °C for indium and 200-335 °C for tin. The minimum...

Full description

Saved in:
Bibliographic Details
Published in:EPJ Web of conferences 2019, Vol.196, p.23
Main Authors: Barsukov, Andrey, Khmel, Sergey
Format: Article
Language:English
Subjects:
Catalysis
Catalysts
Chemical synthesis
Chemical vapor deposition
Electron beams
Eutectic temperature
Indium
Morphology
Nanowires
Organic chemistry
Silicon dioxide
Temperature
Titanium nitride
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Silicon nanowires were synthesized by electron beam plasmaenhanced chemical vapor deposition. The synthesis was carried out using indium and tin catalyst with an average particle size of 100 and 660 nm, respectively, in the temperature range 100-270 °C for indium and 200-335 °C for tin. The minimum (optimum) temperature was found at which an oriented array of microropes was formed. This temperature was 200 °C for indium and 335 °C for tin. In addition, it was found that the formation of individual microropes on the tin catalyst occurred at a temperature lower than the eutectic temperature (232 °C). For indium, this effect was not observed. The silica nanowires synthesized on both catalysts consist of SiOx with x ranging from 1.9 to 2 for all temperatures.
ISSN:2100-014X
2101-6275
2100-014X
DOI:10.1051/epjconf/201919600023