Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with...

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Bibliographic Details
Published in:Micromachines (Basel) 2022-03, Vol.13 (4), p.508
Main Authors: Lee, Inyoung, Park, Hyojin, Nguyen, Quan The, Kim, Garam, Cho, Seongjae, Cho, Ilhwan
Format: Article
Language:English
Subjects:
Asymmetry
device optimization
Doping
feedback field-effect transistor (FBFET)
Field effect transistors
Nanowires
on–off current ratio
Optimization
Positive feedback
Semiconductor devices
Silicon
Simulation
subthreshold swing
TCAD
Transistors
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Summary:A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi13040508