Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

• Published in: Nano-micro letters 2021-01, Vol.13 (1), p.33-33, Article 33
• Main Authors: Xue, Yuan, Yan, Shuai, Lv, Shilong, Song, Sannian, Song, Zhitang
• Format: Article
• Language: English
• Subjects: Amorphous structure; Antimony; Antimony telluride; Bonding strength; Computer memory; Coordination numbers; Dimensional stability; Durability; Endurance; Engineering; High speed; High temperature; High-temperature operation; Intermetallic compounds; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Phase-change memory; Power consumption; Power management; Risk management; Robustness; Tellurium; Temperature; Thermal stability
• ISSN: 2311-6706; 2150-5551
• DOI: 10.1007/s40820-020-00557-4

Highlights Phase-change memory based on Ta-doped antimony telluride (Sb 2 Te) exhibits both high-speed characteristics and excellent high-temperature characteristics, allowing improved performance and new applications. The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms enhance the robustness of the amorphous structure, ensuring good thermal stability. Through the three-dimensional limit, the formation of small grains reduces the power consumption and improves the long-term endurance. Phase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures, which is critical for the efficient processing and reliable storage of data at full capacity. Herein, we report a novel PCM device based on Ta-doped antimony telluride (Sb 2 Te), which exhibits both high-speed characteristics and excellent high-temperature characteristics, with an operation speed of 2 ns, endurance of > 10 6 cycles, and reversible switching at 140 °C. The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure, which improves the thermal stability. Furthermore, the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation, reducing the power consumption and improving the long-term endurance. Our findings for this new Ta–Sb 2 Te material system can facilitate the development of PCMs with improved performance and novel applications.