Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

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Bibliographic Details
Published in:Scientific reports 2024-04, Vol.14 (1), p.9334-9334, Article 9334
Main Authors: Cao, Weicheng, Song, Chunyan, Liao, Hui, Yang, Ningxuan, Wang, Rui, Tang, Guanghui, Ji, Hongyu
Format: Article
Language:English
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Author
Author Correction
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
Simulation analysis
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-024-60017-6