Effects of Seed-Layer N2O Plasma Treatment on ZnO Nanorod Based Ultraviolet Photodetectors: Experimental Investigation with Two Different Device Structures

The crystalline quality of ZnO NR (nanorod) as a sensing material for visible blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) material of properties, which is a key to high-quality nanocrystallite growth, more so than the synthesis method. In this study, we fabricate...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2021-08, Vol.11 (8), p.2011
Main Authors: Lee, Seungmin, Nam, Kiyun, Kim, Jae Hyun, Hong, Gi Young, Kim, Sam-Dong
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Annealing
Aqueous solutions
Crystal structure
Crystallinity
high electron mobility transistor
High electron mobility transistors
interdigitated electrode
Light
Microscopy
Morphology
N2O plasma treatment
Nanorods
Nitrates
Nitrous oxide
Optical properties
Organic chemicals
Photoluminescence
Photometers
Photons
Plasma etching
Polyethylene
Polyethylene terephthalate
Substrates
Ultraviolet detectors
ultraviolet photodetectors
X-ray diffraction
Zinc oxide
ZnO nanorods
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Summary:The crystalline quality of ZnO NR (nanorod) as a sensing material for visible blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) material of properties, which is a key to high-quality nanocrystallite growth, more so than the synthesis method. In this study, we fabricated two different device structures of a gateless AlGaN/GaN HEMT (high electron mobility transistor) and a photoconductive PD structure with an IDE (interdigitated electrode) pattern implemented on a PET (polyethylene terephthalate) flexible substrate, and investigated the impact on device performance through the SL N2O plasma treatment. In case of HEMT-based PD, the highest current on-off ratio (~7) and spectral responsivity R (~1.5 × 105 A/W) were obtained from the treatment for 6 min, whereas the IDE pattern-based PD showed the best performance (on-off ratio = ~44, R = ~69 A/W) from the treatment for 3 min and above, during which a significant etch damage on PET substrates was produced. This improvement in device performance was due to the enhancement in NR crystalline quality as revealed by our X-ray diffraction, photoluminescence, and microanalysis.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11082011