Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE...

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Bibliographic Details
Published in:Micromachines (Basel) 2024-03, Vol.15 (3), p.388
Main Authors: Li, Renyi, Ge, Chen, Liang, Chenwei, Zhong, Shichang
Format: Article
Language:English
Subjects:
Accuracy
Amplification
Analysis
Communication
Continuous radiation
Doherty PA
EE_HEMT model
Efficiency
Frequency ranges
Gallium nitrides
GaN HEMT
High electron mobility transistors
Load pull tests
Low temperature tests
Matching
Model accuracy
Power amplifiers
Power gain
Simulation
Transistors
Wireless communications
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Summary:This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55-2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < -50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi15030388