Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires

Self-limiting oxidation of nanowires has been previously described as a reaction- or diffusion-controlled process. In this letter, the concept of finite reactive region is introduced into a diffusion-controlled model, based upon which a two-dimensional cylindrical kinetics model is developed for the...

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Bibliographic Details
Published in:Theoretical and applied mechanics letters 2016-09, Vol.6 (5), p.195-199
Main Authors: Liu, Mingchao, Jin, Peng, Xu, Zhiping, Hanaor, Dorian A.H., Gan, Yixiang, Chen, Changqing
Format: Article
Language:English
Subjects:
Chemical Physics
Condensed Matter
Engineering Sciences
Finite reactive region
Kinetics model
Materials Science
Micro and nanotechnologies
Microelectronics
Nanowires
Physics
Self-limiting oxidation
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Summary:Self-limiting oxidation of nanowires has been previously described as a reaction- or diffusion-controlled process. In this letter, the concept of finite reactive region is introduced into a diffusion-controlled model, based upon which a two-dimensional cylindrical kinetics model is developed for the oxidation of silicon nanowires and is extended for tungsten. In the model, diffusivity is affected by the expansive oxidation reaction induced stress. The dependency of the oxidation upon curvature and temperature is modeled. Good agreement between the model predictions and available experimental data is obtained. The de- veloped model serves to quantify the oxidation in two-dimensional nanostructures and is expected to facilitate their fabrication via thermal oxidation techniques.
ISSN:2095-0349
DOI:10.1016/j.taml.2016.08.002