Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To gu...

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Bibliographic Details
Published in:Micromachines (Basel) 2019-05, Vol.10 (5), p.314
Main Authors: Li, Hui, Yu, Renze, Zhong, Yi, Yao, Ran, Liao, Xinglin, Chen, Xianping
Format: Article
Language:English
Subjects:
Circuit breakers
Circuit design
Circuits
Design
Direct current
Distributed generation
Energy
Energy absorption
Fault detection
Field effect transistors
High temperature
Insulated gate bipolar transistors
Metal oxide semiconductors
MOSFETs
prototype
Prototypes
Semiconductor devices
Short circuits
Silicon carbide
silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)
Solid state
solid state circuit breaker (SSCB)
Switching
Topology
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Summary:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To guarantee fast and reliable action of a 400 V DC SSCB with SiC MOSFET, circuit design and prototype development were carried out. Taking 400V DC microgrid as research background, firstly, the topology of DC SSCB with SiC MOSFET was introduced. Then, the drive circuit of SiC MOSFET, fault detection circuit, energy absorption circuit, and snubber circuit of the SSCB were designed and analyzed. Lastly, a prototype of the DC SSCB with SiC MOSFET was developed, tested, and compared with the SSCB with Silicon (Si) insulated gate bipolar transistor (IGBT). Experimental results show that the designed circuits of SSCB with SiC MOSFET are valid. Also, the developed miniature DC SSCB with the SiC MOSFET exhibits faster reaction to the fault and can reduce short circuit time and fault current in contrast with the SSCB with Si IGBT. Hence, the proposed SSCB can better meet the requirements of DC microgrid protection.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi10050314