Tuning Electronic Properties of GaSe/Silicane Van der Waals Heterostructure by External Electric Field and Strain: A First-Principle Study

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap featu...

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Bibliographic Details
Published in:Advances in condensed matter physics 2021, Vol.2021, p.1-8
Main Authors: Xu, Gang, Lei, Hao
Format: Article
Language:English
Subjects:
Alignment
Electric fields
Electronic properties
Electronic structure
Energy
Energy gap
First principles
Graphene
Heterostructures
Hydrogenation
Optical properties
Optoelectronic devices
Values
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Summary:The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.
ISSN:1687-8108
1687-8124
DOI:10.1155/2021/5514897