Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes

Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a vers...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale research letters 2011-03, Vol.6 (1), p.215-215, Article 215
Main Authors: Harazim, Stefan M, Feng, Ping, Sanchez, Samuel, Deneke, Christoph, Mei, Yongfeng, Schmidt, Oliver G
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-6-215