Properties of arsenic–implanted Hg1-xCdxTe MBE films

Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation w...

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Main Authors: Izhnin, Igor I, Voitsekhovskii, Alexandr V, Korotaev, Alexandr G, Fitsych, Olena I, Oleksandr Yu Bonchyk, Savytskyy, Hrygory V, Mynbaev, Karim D, Varavin, Vasilii S, Dvoretsky, Sergey A, Yakushev, Maxim V, Jakiela, Rafal, Trzyna, Malgorzata
Format: Conference Proceeding
Language:English
Subjects:
Arsenic
Arsenic ions
Defect annealing
Electrical properties
Epitaxial growth
Implantation
Mercury cadmium tellurides
Molecular beam epitaxy
Molecular chains
Optical properties
Optics
Radiation effects
Silicon substrates
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Summary:Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.
ISSN:2101-6275
2100-014X
DOI:10.1051/epjconf/201713301001