Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications

We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2024-10, Vol.24 (19), p.6382
Main Authors: Kim, Taegi, Lee, Doowon, Chae, Myoungsu, Kim, Kyeong-Heon, Kim, Hee-Dong
Format: Article
Language:English
Subjects:
Electrodes
Energy consumption
Gas flow
gasistor application
Humidity
Morphology
resistive switching
roughness of BE
Sensors
Temperature
transparent memristor
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Summary:We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 104 s. As a result, it is shown that the proposed transparent memristor with an RS BE can significantly enhance the device’s reliability for gasistor applications.
ISSN:1424-8220
1424-8220
DOI:10.3390/s24196382