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Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications
We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and...
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Published in: | Sensors (Basel, Switzerland) Switzerland), 2024-10, Vol.24 (19), p.6382 |
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creator | Kim, Taegi Lee, Doowon Chae, Myoungsu Kim, Kyeong-Heon Kim, Hee-Dong |
description | We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 104 s. As a result, it is shown that the proposed transparent memristor with an RS BE can significantly enhance the device’s reliability for gasistor applications. |
doi_str_mv | 10.3390/s24196382 |
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The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 104 s. As a result, it is shown that the proposed transparent memristor with an RS BE can significantly enhance the device’s reliability for gasistor applications.</description><identifier>ISSN: 1424-8220</identifier><identifier>EISSN: 1424-8220</identifier><identifier>DOI: 10.3390/s24196382</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Electrodes ; Energy consumption ; Gas flow ; gasistor application ; Humidity ; Morphology ; resistive switching ; roughness of BE ; Sensors ; Temperature ; transparent memristor</subject><ispartof>Sensors (Basel, Switzerland), 2024-10, Vol.24 (19), p.6382</ispartof><rights>2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 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subjects | Electrodes Energy consumption Gas flow gasistor application Humidity Morphology resistive switching roughness of BE Sensors Temperature transparent memristor |
title | Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications |
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