Analysis of Back Surface Field (BSF) Performance in P-Type And N-Type Monocrystalline Silicon Wafer

• Main Authors: Ferdiansjah, Faridah, Tirtakusuma Mularso, Kelvian
• Format: Conference Proceeding
• Language: English
• Subjects: Current density; Doping; Efficiency; Emitters; Error functions; Open circuit voltage; Photovoltaic cells; Production methods; Recombination; Short circuit currents; Short circuits; Silicon; Silicon wafers; Solar cells; Velocity
• ISSN: 2267-1242; 2555-0403; 2267-1242
• DOI: 10.1051/e3sconf/20184301006

Back Surface Field (BSF) has been used as one of means to enhance solar cell performance by reducing surface recombination velocity (SRV). One of methods to produce BSF is by introducing highly doped layer on rear surface of the wafer. Depending on the type of the dopant in wafer, the BSF layer could be either p + or n + . This research aims to compare the performance of BSF layer both in p-type and n-type wafer in order to understand the effect of BSF on both wafer types. Monociystalline silicon wafer with thickness of 300 μm. area of 1 cm 2 , bulk doping level NB = 1.5×10 16 /cm 3 both for p-type wafer and n-type wafer are used. Both wafer then converted into solar cell by adding emitter layer with concentration NE =7.5×10 18 /cm 3 both for p-type wafer and n-type wafer. Doping profile that is used for emitter layer is following complementary error function (erfc) distribution profile. BSF concentration is varied from 1×10 17 /cm 3 to 1×10 20 /cm 3 for each of the cell. Solar cell performance is tested under standard condition, with AM 1.5G spectrum at 1000 W/m 2 . Its output is measured based on its open circuit voltage ( V oc ). short circuit current density ( J SC ), efficiency ( η ). and fill factor ( FF ). The result shows that the value of VOC is relatively constant along the range of BSF concentration, which is 0.694 V – 0.702 V. The same pattern is also observed in FF value which is between 0.828 – 0.831. On the other hand, value of JSC and efficiency will drop against the increase of BSF concentration. Highest J SC which is 0.033 A/cm 2 and highest efficiency which is 18.6% is achieved when BSF concentration is slightly higher than bulk doping level. The best efficiency can be produced when BSF concentration is around 1×10 17 cm -3 .. This result confirms that surface recombination velocity has been reduced due to the increase in cell’s short circuit current density and its efficiency. In general both p-type and n-type wafer will produce higher efficiency when BSF is applied. However, the increase is larger in p-type wafer than in n-type wafer. Better performance for solar cell is achieved when BSF concentration is slightly higher that bulk doping level because at very high BSF concentration the cell’s efficiency will be decreased.