Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures

Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal-insulator-semiconductor and metal-insulator-metal structures based on hafnium oxide layers. The fabricated structures were characterized through the stress-and-sense measurements in terms of d...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2020-11, Vol.10 (12), p.2387
Main Authors: Mazurak, Andrzej, Mroczyński, Robert, Beke, David, Gali, Adam
Format: Article
Language:English
Subjects:
Aluminum
Capacitance
Electric currents
electrical characterization
Electrodes
Etching
Feasibility studies
Hafnium
Hafnium oxide
high-k dielectric
Investigations
Memory devices
metal–insulator–metal (MIM)
metal–insulator–semiconductor (MIS)
MIS (semiconductors)
Nanocrystals
Nanoparticles
Retention time
Silicon
Silicon carbide
silicon-carbide (SiC) nanocrystals
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Summary:Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal-insulator-semiconductor and metal-insulator-metal structures based on hafnium oxide layers. The fabricated structures were characterized through the stress-and-sense measurements in terms of device capacitance, flat-band voltage shift, switching characteristics, and retention time. The examined electrical performance of the sample structures has demonstrated the feasibility of the application of both types of structures based on SiC nanoparticles in memory devices.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano10122387