Capacitor Reused Gate Driver for Compact In-Cell Touch Displays

• Published in: IEEE journal of the Electron Devices Society 2021, Vol.9, p.533-538
• Main Authors: Shen, Shuai, Liao, Congwei, Yang, Jiwen, Jiao, Hailong, Zhang, Shengdong
• Format: Article
• Language: English
• Subjects: bidirectional scanning; Capacitor reusing; Capacitors; display; Driver stages; Electrodes; gate driver; Gate drivers; in-cell touch; Logic gates; Semiconductor devices; Sensors; Thin film transistors; Touch; Transient response; Transistors
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2021.3077141

A thin-film transistor (TFT) integrated gate driver is proposed for compact in-cell touch display, where one capacitor is reused for both turning on low-level maintaining transistors via voltage coupling and maintaining the re-start charge during the touch sensing period. The gate terminal of buffer transistor is thus free of electrical stress during touch sensing period, and can be re-charged for the subsequent re-start period, leading to minimal variations in the transient response. With the capacitor reusing scheme and a capacitor stacking structure, the area of the single stage gate driver is decreased to 645\,\,\mu \text{m}\,\,\times 210\,\,\mu \text{m} . The fabricated a-Si TFT gate driver with 8 cascaded stages shows that the rising and falling time variations among re-start and normal gate driver stages are less than 1~\mu \text{s} . Versatile touch sensing modes and bidirectional scanning functions are verified.