Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga2O3 Phototransistors

We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet (DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold voltage (VT) switches between negative and positive depending on the β-Ga2O3 channel thickness and doping concentration. Chann...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2024-09, Vol.24 (17), p.5822
Main Authors: Yoon, Youngbin, Kim, Yongki, Shin, Myunghun
Format: Article
Language:English
Subjects:
Annealing
Atmosphere
Composite materials
computer-aided design (TCAD) simulations
Crystal structure
Efficiency
Electrodes
enhancement-mode MOSFET
Fourier transforms
gallium oxide (Ga2O3)
Light
Metal oxides
phototransistor
Semiconductors
Sensors
Signal to noise ratio
spin-on-glass (SOG) doping
Thin films
Transistors
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Summary:We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet (DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold voltage (VT) switches between negative and positive depending on the β-Ga2O3 channel thickness and doping concentration. Channel depletion and Ga diffusion during manufacturing significantly influence device characteristics, as validated through computer-aided design (TCAD) simulations, which agree with the experimental results. We achieved enhancement-mode (e-mode) operation in
ISSN:1424-8220
1424-8220
DOI:10.3390/s24175822