Arbitrary cross-section SEM-cathodoluminescence imaging of growth sectors and local carrier concentrations within micro-sampled semiconductor nanorods

Future one-dimensional electronics require single-crystalline semiconductor free-standing nanorods grown with uniform electrical properties. However, this is currently unrealistic as each crystallographic plane of a nanorod grows at unique incorporation rates of environmental dopants, which forms ax...

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Bibliographic Details
Published in:Nature communications 2016-02, Vol.7 (1), p.10609-10609, Article 10609
Main Authors: Watanabe, Kentaro, Nagata, Takahiro, Oh, Seungjun, Wakayama, Yutaka, Sekiguchi, Takashi, Volk, János, Nakamura, Yoshiaki
Format: Article
Language:English
Subjects:
142/126
639/301/119/1000
639/766/25
639/925/357
639/925/930/328/1649
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
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Summary:Future one-dimensional electronics require single-crystalline semiconductor free-standing nanorods grown with uniform electrical properties. However, this is currently unrealistic as each crystallographic plane of a nanorod grows at unique incorporation rates of environmental dopants, which forms axial and lateral growth sectors with different carrier concentrations. Here we propose a series of techniques that micro-sample a free-standing nanorod of interest, fabricate its arbitrary cross-sections by controlling focused ion beam incidence orientation, and visualize its internal carrier concentration map. ZnO nanorods are grown by selective area homoepitaxy in precursor aqueous solution, each of which has a (0001):+ c top-plane and six {1–100}: m side-planes. Near-band-edge cathodoluminescence nanospectroscopy evaluates carrier concentration map within a nanorod at high spatial resolution (60 nm) and high sensitivity. It also visualizes +c and m growth sectors at arbitrary nanorod cross-section and history of local transient growth events within each growth sector. Our technique paves the way for well-defined bottom-up nanoelectronics. Semiconductor nanocrystals are potential nanoelectronic materials but often display nonuniform electric properties due to their anisotropic growths. Here, the authors report cross-sectional cathodoluminescence imaging of a single-crystalline ZnO nanowire to resolve its growth sectors with different carrier concentrations.
ISSN:2041-1723
2041-1723
DOI:10.1038/ncomms10609