Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe_{2}

Few-layer (FL) transition metal dichalcogenides have been found to exhibit discrete subbands, called van der Waals quantum well (vdWQW) states, resulting from out-of-plane quantum confinement. In this study, we reveal the twisted-resonant tunneling characteristics of a vdWQW device using a three-lay...

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Published in:Physical review research 2023-12, Vol.5 (4), p.043292
Main Authors: Kei Kinoshita, Rai Moriya, Shota Okazaki, Yijin Zhang, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Tomoki Machida
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Rai Moriya
Shota Okazaki
Yijin Zhang
Satoru Masubuchi
Kenji Watanabe
Takashi Taniguchi
Takao Sasagawa
Tomoki Machida
description Few-layer (FL) transition metal dichalcogenides have been found to exhibit discrete subbands, called van der Waals quantum well (vdWQW) states, resulting from out-of-plane quantum confinement. In this study, we reveal the twisted-resonant tunneling characteristics of a vdWQW device using a three-layer (3L) WSe_{2}/h-BN/3L-WSe_{2} junction with different twist angles θ_{tunnel} between the two 3L WSe_{2} flakes. Using an ambipolar graphene contact to WSe_{2}, two primary vdWQW states of 3L WSe_{2} located in the conduction band (CB) and valence band (VB) were investigated. We found that while the current peak positions due to the electron resonant tunneling between the CB-QW states significantly change with θ_{tunnel} having a periodicity of 60^{∘}, the hole resonant tunneling between the VB-QW states exhibits no θ_{tunnel} dependence; these are due to different angular dispersions of two vdWQWs. The results highlight the different twistronic properties of CB and VB vdWQWs in FL WSe_{2}.
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fullrecord <record><control><sourceid>doaj</sourceid><recordid>TN_cdi_doaj_primary_oai_doaj_org_article_5b1c1188929142f685299cf6dfd71ecb</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_5b1c1188929142f685299cf6dfd71ecb</doaj_id><sourcerecordid>oai_doaj_org_article_5b1c1188929142f685299cf6dfd71ecb</sourcerecordid><originalsourceid>FETCH-doaj_primary_oai_doaj_org_article_5b1c1188929142f685299cf6dfd71ecb3</originalsourceid><addsrcrecordid>eNqtjF1KAzEYAIMgWGrvkAvsmi-7WTfPouhbqYK-hWzypU2JSUliy1K8uz94BJ8GZmAIocBaANbdrHdz2eBxgwV1NrtWtKzvuOQXZMGHvmtADP0VWZWyZ4xxAdCPYkHe1ino7OvcWDxgtBgrrSdfamNSrDmFgJZmLCnqn_IRIwYft9Ti0Rukky7fPUXq8NQEPWOmr8-ozvzzmlw6HQqu_rgkTw_3L3ePjU16rw7Zv-s8q6S9-hUpb5XO1ZuASkxgAMZRcgk9d8MouJTGDdbZW0Azdf_5-gKduGX9</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe_{2}</title><source>DOAJ Directory of Open Access Journals</source><creator>Kei Kinoshita ; Rai Moriya ; Shota Okazaki ; Yijin Zhang ; Satoru Masubuchi ; Kenji Watanabe ; Takashi Taniguchi ; Takao Sasagawa ; Tomoki Machida</creator><creatorcontrib>Kei Kinoshita ; Rai Moriya ; Shota Okazaki ; Yijin Zhang ; Satoru Masubuchi ; Kenji Watanabe ; Takashi Taniguchi ; Takao Sasagawa ; Tomoki Machida</creatorcontrib><description>Few-layer (FL) transition metal dichalcogenides have been found to exhibit discrete subbands, called van der Waals quantum well (vdWQW) states, resulting from out-of-plane quantum confinement. In this study, we reveal the twisted-resonant tunneling characteristics of a vdWQW device using a three-layer (3L) WSe_{2}/h-BN/3L-WSe_{2} junction with different twist angles θ_{tunnel} between the two 3L WSe_{2} flakes. Using an ambipolar graphene contact to WSe_{2}, two primary vdWQW states of 3L WSe_{2} located in the conduction band (CB) and valence band (VB) were investigated. We found that while the current peak positions due to the electron resonant tunneling between the CB-QW states significantly change with θ_{tunnel} having a periodicity of 60^{∘}, the hole resonant tunneling between the VB-QW states exhibits no θ_{tunnel} dependence; these are due to different angular dispersions of two vdWQWs. The results highlight the different twistronic properties of CB and VB vdWQWs in FL WSe_{2}.</description><identifier>EISSN: 2643-1564</identifier><identifier>DOI: 10.1103/PhysRevResearch.5.043292</identifier><language>eng</language><publisher>American Physical Society</publisher><ispartof>Physical review research, 2023-12, Vol.5 (4), p.043292</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,2095,27903,27904</link.rule.ids></links><search><creatorcontrib>Kei Kinoshita</creatorcontrib><creatorcontrib>Rai Moriya</creatorcontrib><creatorcontrib>Shota Okazaki</creatorcontrib><creatorcontrib>Yijin Zhang</creatorcontrib><creatorcontrib>Satoru Masubuchi</creatorcontrib><creatorcontrib>Kenji Watanabe</creatorcontrib><creatorcontrib>Takashi Taniguchi</creatorcontrib><creatorcontrib>Takao Sasagawa</creatorcontrib><creatorcontrib>Tomoki Machida</creatorcontrib><title>Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe_{2}</title><title>Physical review research</title><description>Few-layer (FL) transition metal dichalcogenides have been found to exhibit discrete subbands, called van der Waals quantum well (vdWQW) states, resulting from out-of-plane quantum confinement. In this study, we reveal the twisted-resonant tunneling characteristics of a vdWQW device using a three-layer (3L) WSe_{2}/h-BN/3L-WSe_{2} junction with different twist angles θ_{tunnel} between the two 3L WSe_{2} flakes. Using an ambipolar graphene contact to WSe_{2}, two primary vdWQW states of 3L WSe_{2} located in the conduction band (CB) and valence band (VB) were investigated. We found that while the current peak positions due to the electron resonant tunneling between the CB-QW states significantly change with θ_{tunnel} having a periodicity of 60^{∘}, the hole resonant tunneling between the VB-QW states exhibits no θ_{tunnel} dependence; these are due to different angular dispersions of two vdWQWs. The results highlight the different twistronic properties of CB and VB vdWQWs in FL WSe_{2}.</description><issn>2643-1564</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqtjF1KAzEYAIMgWGrvkAvsmi-7WTfPouhbqYK-hWzypU2JSUliy1K8uz94BJ8GZmAIocBaANbdrHdz2eBxgwV1NrtWtKzvuOQXZMGHvmtADP0VWZWyZ4xxAdCPYkHe1ino7OvcWDxgtBgrrSdfamNSrDmFgJZmLCnqn_IRIwYft9Ti0Rukky7fPUXq8NQEPWOmr8-ozvzzmlw6HQqu_rgkTw_3L3ePjU16rw7Zv-s8q6S9-hUpb5XO1ZuASkxgAMZRcgk9d8MouJTGDdbZW0Azdf_5-gKduGX9</recordid><startdate>20231201</startdate><enddate>20231201</enddate><creator>Kei Kinoshita</creator><creator>Rai Moriya</creator><creator>Shota Okazaki</creator><creator>Yijin Zhang</creator><creator>Satoru Masubuchi</creator><creator>Kenji Watanabe</creator><creator>Takashi Taniguchi</creator><creator>Takao Sasagawa</creator><creator>Tomoki Machida</creator><general>American Physical Society</general><scope>DOA</scope></search><sort><creationdate>20231201</creationdate><title>Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe_{2}</title><author>Kei Kinoshita ; Rai Moriya ; Shota Okazaki ; Yijin Zhang ; Satoru Masubuchi ; Kenji Watanabe ; Takashi Taniguchi ; Takao Sasagawa ; Tomoki Machida</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-doaj_primary_oai_doaj_org_article_5b1c1188929142f685299cf6dfd71ecb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kei Kinoshita</creatorcontrib><creatorcontrib>Rai Moriya</creatorcontrib><creatorcontrib>Shota Okazaki</creatorcontrib><creatorcontrib>Yijin Zhang</creatorcontrib><creatorcontrib>Satoru Masubuchi</creatorcontrib><creatorcontrib>Kenji Watanabe</creatorcontrib><creatorcontrib>Takashi Taniguchi</creatorcontrib><creatorcontrib>Takao Sasagawa</creatorcontrib><creatorcontrib>Tomoki Machida</creatorcontrib><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Physical review research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kei Kinoshita</au><au>Rai Moriya</au><au>Shota Okazaki</au><au>Yijin Zhang</au><au>Satoru Masubuchi</au><au>Kenji Watanabe</au><au>Takashi Taniguchi</au><au>Takao Sasagawa</au><au>Tomoki Machida</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe_{2}</atitle><jtitle>Physical review research</jtitle><date>2023-12-01</date><risdate>2023</risdate><volume>5</volume><issue>4</issue><spage>043292</spage><pages>043292-</pages><eissn>2643-1564</eissn><abstract>Few-layer (FL) transition metal dichalcogenides have been found to exhibit discrete subbands, called van der Waals quantum well (vdWQW) states, resulting from out-of-plane quantum confinement. In this study, we reveal the twisted-resonant tunneling characteristics of a vdWQW device using a three-layer (3L) WSe_{2}/h-BN/3L-WSe_{2} junction with different twist angles θ_{tunnel} between the two 3L WSe_{2} flakes. Using an ambipolar graphene contact to WSe_{2}, two primary vdWQW states of 3L WSe_{2} located in the conduction band (CB) and valence band (VB) were investigated. We found that while the current peak positions due to the electron resonant tunneling between the CB-QW states significantly change with θ_{tunnel} having a periodicity of 60^{∘}, the hole resonant tunneling between the VB-QW states exhibits no θ_{tunnel} dependence; these are due to different angular dispersions of two vdWQWs. The results highlight the different twistronic properties of CB and VB vdWQWs in FL WSe_{2}.</abstract><pub>American Physical Society</pub><doi>10.1103/PhysRevResearch.5.043292</doi><oa>free_for_read</oa></addata></record>
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title Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe_{2}
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T22%3A55%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-doaj&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Polarity-dependent%20twist-controlled%20resonant%20tunneling%20device%20based%20on%20few-layer%20WSe_%7B2%7D&rft.jtitle=Physical%20review%20research&rft.au=Kei%20Kinoshita&rft.date=2023-12-01&rft.volume=5&rft.issue=4&rft.spage=043292&rft.pages=043292-&rft.eissn=2643-1564&rft_id=info:doi/10.1103/PhysRevResearch.5.043292&rft_dat=%3Cdoaj%3Eoai_doaj_org_article_5b1c1188929142f685299cf6dfd71ecb%3C/doaj%3E%3Cgrp_id%3Ecdi_FETCH-doaj_primary_oai_doaj_org_article_5b1c1188929142f685299cf6dfd71ecb3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true