Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module

• Published in: Electronics letters 2023-07, Vol.59 (13), p.n/a
• Main Authors: Elangovan, Surya, Cheng, Stone, Jang, Wen‐Yea, Chang, Edward Yi
• Format: Article
• Language: English
• Subjects: Buffer layers; Dynamic stability; Electric potential; emiconductor device testing; Frequency stability; Gallium nitrides; high electron mobility transistors; Modules; semiconductor device reliability; Switching; switching circuits; Topology; Voltage
• ISSN: 0013-5194; 1350-911X
• DOI: 10.1049/ell2.12824

The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test topology is utilized to evaluate switching dependencies on voltage, current, and frequency, showing its versatility in investigating the switching instability of the device. The extended defects in the buffer layer resulted in a decrease in dynamic on‐state resistance (RDS‐ON) under hard switching conditions. Despite this, no noticeable RDS‐ON degradation occurs under harsh switching conditions due to electron de‐trapping. This study comprehensively analyzes the dynamic stability of a multi‐GaN‐chip cascode module with devices. The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The extended defects in the buffer layer resulted in a decrease in dynamic on‐state resistance under hard switching conditions. This study comprehensively analyzed the dynamic stability of a multi‐GaN‐chip cascode module with two GaN cascode switches.