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Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress

In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. S...

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Published in:Computation 2023-02, Vol.11 (2), p.34
Main Authors: Kumari, Sneha, Pathak, Akhilesh Kumar, Gangwar, Rahul Kumar, Gupta, Sumanta
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creator Kumari, Sneha
Pathak, Akhilesh Kumar
Gangwar, Rahul Kumar
Gupta, Sumanta
description In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. SiGe cladding thickness is varied from 5 nm to 40 nm. Characterization of the MMI coupler for ridge waveguides with both rectangular and trapezoidal sidewall slope angle cross-sections is reviewed in terms of power splitting ratio and birefringence. Stress-induced birefringence as a function of operating temperature and cladding thickness for fundamental mode have been calculated. A trapezoidal waveguide with 40 nm of cladding thickness induces more stress and, therefore, affects birefringence more than a rectangular waveguide of any thickness. Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler.
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fullrecord <record><control><sourceid>gale_doaj_</sourceid><recordid>TN_cdi_doaj_primary_oai_doaj_org_article_5b4e684ec2e74eb3bc789fe69c28e4d5</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A742390959</galeid><doaj_id>oai_doaj_org_article_5b4e684ec2e74eb3bc789fe69c28e4d5</doaj_id><sourcerecordid>A742390959</sourcerecordid><originalsourceid>FETCH-LOGICAL-c357t-3c65efd82899695b6ea03ee321c492ed76a3f237089b7c927510b66bce0b6553</originalsourceid><addsrcrecordid>eNptUctOwzAQjBBIVKVfwCUS5xQ_4jg-VhWUShQq0bvlOOvKVRIHOz3073EIQhzYPexDM6PVTpLcY7SkVKBH7dr-PKjBug5jRBCi-VUyI4iLjGLBr__0t8kihBOKITAtCZolb3vwxvlWdRrSVaeaS7AhdSb9sBvI1o2qa6jj0FjtunS326Zrd-4b8Knt0r2HACNxxA9xCHfJjVFNgMVPnSeH56fD-iV7fd9s16vXTFPGh4zqgoGpS1IKUQhWFaAQBaAE61wQqHmhqCGUo1JUXAvCGUZVUVQaYmGMzpPtJFs7dZK9t63yF-mUld8L549S-cHqBiSrcijKHDQBnkNFK81LYaAQmpSQ16PWw6TVe_d5hjDIkzv7-IkgCeeCUYIwj6jlhDqqKGo74wavdMwa2vE1YGzcr3hOoiWCiUigE0F7F4IH83smRnL0Tf7jG_0CBsqMcQ</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2779532017</pqid></control><display><type>article</type><title>Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress</title><source>Publicly Available Content Database</source><creator>Kumari, Sneha ; Pathak, Akhilesh Kumar ; Gangwar, Rahul Kumar ; Gupta, Sumanta</creator><creatorcontrib>Kumari, Sneha ; Pathak, Akhilesh Kumar ; Gangwar, Rahul Kumar ; Gupta, Sumanta</creatorcontrib><description>In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. SiGe cladding thickness is varied from 5 nm to 40 nm. Characterization of the MMI coupler for ridge waveguides with both rectangular and trapezoidal sidewall slope angle cross-sections is reviewed in terms of power splitting ratio and birefringence. Stress-induced birefringence as a function of operating temperature and cladding thickness for fundamental mode have been calculated. A trapezoidal waveguide with 40 nm of cladding thickness induces more stress and, therefore, affects birefringence more than a rectangular waveguide of any thickness. Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler.</description><identifier>ISSN: 2079-3197</identifier><identifier>EISSN: 2079-3197</identifier><identifier>DOI: 10.3390/computation11020034</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Bandwidths ; Birefringence ; Cladding ; coupler ; Couplers ; Design ; Design and construction ; Finite element method ; Geometry ; Integrated circuits ; interference ; Mathematical analysis ; Misfit dislocations ; Operating temperature ; Parameter modification ; Photonics ; Propagation ; Rectangular waveguides ; Silicon ; Silicon germanides ; Silicon-on-isolator ; stress ; temperature ; Thickness</subject><ispartof>Computation, 2023-02, Vol.11 (2), p.34</ispartof><rights>COPYRIGHT 2023 MDPI AG</rights><rights>2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-3c65efd82899695b6ea03ee321c492ed76a3f237089b7c927510b66bce0b6553</citedby><cites>FETCH-LOGICAL-c357t-3c65efd82899695b6ea03ee321c492ed76a3f237089b7c927510b66bce0b6553</cites><orcidid>0000-0002-1656-3428 ; 0000-0002-6928-1109</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/2779532017/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2779532017?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,25753,27924,27925,37012,44590,74998</link.rule.ids></links><search><creatorcontrib>Kumari, Sneha</creatorcontrib><creatorcontrib>Pathak, Akhilesh Kumar</creatorcontrib><creatorcontrib>Gangwar, Rahul Kumar</creatorcontrib><creatorcontrib>Gupta, Sumanta</creatorcontrib><title>Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress</title><title>Computation</title><description>In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. SiGe cladding thickness is varied from 5 nm to 40 nm. Characterization of the MMI coupler for ridge waveguides with both rectangular and trapezoidal sidewall slope angle cross-sections is reviewed in terms of power splitting ratio and birefringence. Stress-induced birefringence as a function of operating temperature and cladding thickness for fundamental mode have been calculated. A trapezoidal waveguide with 40 nm of cladding thickness induces more stress and, therefore, affects birefringence more than a rectangular waveguide of any thickness. Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler.</description><subject>Bandwidths</subject><subject>Birefringence</subject><subject>Cladding</subject><subject>coupler</subject><subject>Couplers</subject><subject>Design</subject><subject>Design and construction</subject><subject>Finite element method</subject><subject>Geometry</subject><subject>Integrated circuits</subject><subject>interference</subject><subject>Mathematical analysis</subject><subject>Misfit dislocations</subject><subject>Operating temperature</subject><subject>Parameter modification</subject><subject>Photonics</subject><subject>Propagation</subject><subject>Rectangular waveguides</subject><subject>Silicon</subject><subject>Silicon germanides</subject><subject>Silicon-on-isolator</subject><subject>stress</subject><subject>temperature</subject><subject>Thickness</subject><issn>2079-3197</issn><issn>2079-3197</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><sourceid>DOA</sourceid><recordid>eNptUctOwzAQjBBIVKVfwCUS5xQ_4jg-VhWUShQq0bvlOOvKVRIHOz3073EIQhzYPexDM6PVTpLcY7SkVKBH7dr-PKjBug5jRBCi-VUyI4iLjGLBr__0t8kihBOKITAtCZolb3vwxvlWdRrSVaeaS7AhdSb9sBvI1o2qa6jj0FjtunS326Zrd-4b8Knt0r2HACNxxA9xCHfJjVFNgMVPnSeH56fD-iV7fd9s16vXTFPGh4zqgoGpS1IKUQhWFaAQBaAE61wQqHmhqCGUo1JUXAvCGUZVUVQaYmGMzpPtJFs7dZK9t63yF-mUld8L549S-cHqBiSrcijKHDQBnkNFK81LYaAQmpSQ16PWw6TVe_d5hjDIkzv7-IkgCeeCUYIwj6jlhDqqKGo74wavdMwa2vE1YGzcr3hOoiWCiUigE0F7F4IH83smRnL0Tf7jG_0CBsqMcQ</recordid><startdate>20230201</startdate><enddate>20230201</enddate><creator>Kumari, Sneha</creator><creator>Pathak, Akhilesh Kumar</creator><creator>Gangwar, Rahul Kumar</creator><creator>Gupta, Sumanta</creator><general>MDPI AG</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SC</scope><scope>7XB</scope><scope>8AL</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M0N</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-1656-3428</orcidid><orcidid>https://orcid.org/0000-0002-6928-1109</orcidid></search><sort><creationdate>20230201</creationdate><title>Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress</title><author>Kumari, Sneha ; Pathak, Akhilesh Kumar ; Gangwar, Rahul Kumar ; Gupta, Sumanta</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-3c65efd82899695b6ea03ee321c492ed76a3f237089b7c927510b66bce0b6553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Bandwidths</topic><topic>Birefringence</topic><topic>Cladding</topic><topic>coupler</topic><topic>Couplers</topic><topic>Design</topic><topic>Design and construction</topic><topic>Finite element method</topic><topic>Geometry</topic><topic>Integrated circuits</topic><topic>interference</topic><topic>Mathematical analysis</topic><topic>Misfit dislocations</topic><topic>Operating temperature</topic><topic>Parameter modification</topic><topic>Photonics</topic><topic>Propagation</topic><topic>Rectangular waveguides</topic><topic>Silicon</topic><topic>Silicon germanides</topic><topic>Silicon-on-isolator</topic><topic>stress</topic><topic>temperature</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumari, Sneha</creatorcontrib><creatorcontrib>Pathak, Akhilesh Kumar</creatorcontrib><creatorcontrib>Gangwar, Rahul Kumar</creatorcontrib><creatorcontrib>Gupta, Sumanta</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Computer and Information Systems Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Computing Database (Alumni Edition)</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection (Proquest) (PQ_SDU_P3)</collection><collection>ProQuest Computer Science Collection</collection><collection>Computer Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Computing Database</collection><collection>Advanced Technologies &amp; Aerospace Database</collection><collection>ProQuest Advanced Technologies &amp; Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>ProQuest Central Basic</collection><collection>Directory of Open Access Journals - May need to register for free articles</collection><jtitle>Computation</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumari, Sneha</au><au>Pathak, Akhilesh Kumar</au><au>Gangwar, Rahul Kumar</au><au>Gupta, Sumanta</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress</atitle><jtitle>Computation</jtitle><date>2023-02-01</date><risdate>2023</risdate><volume>11</volume><issue>2</issue><spage>34</spage><pages>34-</pages><issn>2079-3197</issn><eissn>2079-3197</eissn><abstract>In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. SiGe cladding thickness is varied from 5 nm to 40 nm. Characterization of the MMI coupler for ridge waveguides with both rectangular and trapezoidal sidewall slope angle cross-sections is reviewed in terms of power splitting ratio and birefringence. Stress-induced birefringence as a function of operating temperature and cladding thickness for fundamental mode have been calculated. A trapezoidal waveguide with 40 nm of cladding thickness induces more stress and, therefore, affects birefringence more than a rectangular waveguide of any thickness. Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler.</abstract><cop>Basel</cop><pub>MDPI AG</pub><doi>10.3390/computation11020034</doi><orcidid>https://orcid.org/0000-0002-1656-3428</orcidid><orcidid>https://orcid.org/0000-0002-6928-1109</orcidid><oa>free_for_read</oa></addata></record>
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ispartof Computation, 2023-02, Vol.11 (2), p.34
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2079-3197
language eng
recordid cdi_doaj_primary_oai_doaj_org_article_5b4e684ec2e74eb3bc789fe69c28e4d5
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subjects Bandwidths
Birefringence
Cladding
coupler
Couplers
Design
Design and construction
Finite element method
Geometry
Integrated circuits
interference
Mathematical analysis
Misfit dislocations
Operating temperature
Parameter modification
Photonics
Propagation
Rectangular waveguides
Silicon
Silicon germanides
Silicon-on-isolator
stress
temperature
Thickness
title Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T19%3A12%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_doaj_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Performance%20Analysis%20of%20SiGe-Cladded%20Silicon%20MMI%20Coupler%20in%20Presence%20of%20Stress&rft.jtitle=Computation&rft.au=Kumari,%20Sneha&rft.date=2023-02-01&rft.volume=11&rft.issue=2&rft.spage=34&rft.pages=34-&rft.issn=2079-3197&rft.eissn=2079-3197&rft_id=info:doi/10.3390/computation11020034&rft_dat=%3Cgale_doaj_%3EA742390959%3C/gale_doaj_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c357t-3c65efd82899695b6ea03ee321c492ed76a3f237089b7c927510b66bce0b6553%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2779532017&rft_id=info:pmid/&rft_galeid=A742390959&rfr_iscdi=true