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Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress
In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. S...
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Published in: | Computation 2023-02, Vol.11 (2), p.34 |
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description | In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. SiGe cladding thickness is varied from 5 nm to 40 nm. Characterization of the MMI coupler for ridge waveguides with both rectangular and trapezoidal sidewall slope angle cross-sections is reviewed in terms of power splitting ratio and birefringence. Stress-induced birefringence as a function of operating temperature and cladding thickness for fundamental mode have been calculated. A trapezoidal waveguide with 40 nm of cladding thickness induces more stress and, therefore, affects birefringence more than a rectangular waveguide of any thickness. Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler. |
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Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. SiGe cladding thickness is varied from 5 nm to 40 nm. Characterization of the MMI coupler for ridge waveguides with both rectangular and trapezoidal sidewall slope angle cross-sections is reviewed in terms of power splitting ratio and birefringence. Stress-induced birefringence as a function of operating temperature and cladding thickness for fundamental mode have been calculated. A trapezoidal waveguide with 40 nm of cladding thickness induces more stress and, therefore, affects birefringence more than a rectangular waveguide of any thickness. Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler.</description><identifier>ISSN: 2079-3197</identifier><identifier>EISSN: 2079-3197</identifier><identifier>DOI: 10.3390/computation11020034</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Bandwidths ; Birefringence ; Cladding ; coupler ; Couplers ; Design ; Design and construction ; Finite element method ; Geometry ; Integrated circuits ; interference ; Mathematical analysis ; Misfit dislocations ; Operating temperature ; Parameter modification ; Photonics ; Propagation ; Rectangular waveguides ; Silicon ; Silicon germanides ; Silicon-on-isolator ; stress ; temperature ; Thickness</subject><ispartof>Computation, 2023-02, Vol.11 (2), p.34</ispartof><rights>COPYRIGHT 2023 MDPI AG</rights><rights>2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 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Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler.</description><subject>Bandwidths</subject><subject>Birefringence</subject><subject>Cladding</subject><subject>coupler</subject><subject>Couplers</subject><subject>Design</subject><subject>Design and construction</subject><subject>Finite element method</subject><subject>Geometry</subject><subject>Integrated circuits</subject><subject>interference</subject><subject>Mathematical analysis</subject><subject>Misfit dislocations</subject><subject>Operating temperature</subject><subject>Parameter modification</subject><subject>Photonics</subject><subject>Propagation</subject><subject>Rectangular waveguides</subject><subject>Silicon</subject><subject>Silicon germanides</subject><subject>Silicon-on-isolator</subject><subject>stress</subject><subject>temperature</subject><subject>Thickness</subject><issn>2079-3197</issn><issn>2079-3197</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><sourceid>DOA</sourceid><recordid>eNptUctOwzAQjBBIVKVfwCUS5xQ_4jg-VhWUShQq0bvlOOvKVRIHOz3073EIQhzYPexDM6PVTpLcY7SkVKBH7dr-PKjBug5jRBCi-VUyI4iLjGLBr__0t8kihBOKITAtCZolb3vwxvlWdRrSVaeaS7AhdSb9sBvI1o2qa6jj0FjtunS326Zrd-4b8Knt0r2HACNxxA9xCHfJjVFNgMVPnSeH56fD-iV7fd9s16vXTFPGh4zqgoGpS1IKUQhWFaAQBaAE61wQqHmhqCGUo1JUXAvCGUZVUVQaYmGMzpPtJFs7dZK9t63yF-mUld8L549S-cHqBiSrcijKHDQBnkNFK81LYaAQmpSQ16PWw6TVe_d5hjDIkzv7-IkgCeeCUYIwj6jlhDqqKGo74wavdMwa2vE1YGzcr3hOoiWCiUigE0F7F4IH83smRnL0Tf7jG_0CBsqMcQ</recordid><startdate>20230201</startdate><enddate>20230201</enddate><creator>Kumari, Sneha</creator><creator>Pathak, Akhilesh Kumar</creator><creator>Gangwar, Rahul Kumar</creator><creator>Gupta, Sumanta</creator><general>MDPI AG</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SC</scope><scope>7XB</scope><scope>8AL</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M0N</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-1656-3428</orcidid><orcidid>https://orcid.org/0000-0002-6928-1109</orcidid></search><sort><creationdate>20230201</creationdate><title>Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress</title><author>Kumari, Sneha ; 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subjects | Bandwidths Birefringence Cladding coupler Couplers Design Design and construction Finite element method Geometry Integrated circuits interference Mathematical analysis Misfit dislocations Operating temperature Parameter modification Photonics Propagation Rectangular waveguides Silicon Silicon germanides Silicon-on-isolator stress temperature Thickness |
title | Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress |
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