Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

Zr can be stabilized by the element selected, such as Mg-stabilized Zr (MSZ), thus providing MSZ thin films with potentially wide applications and outstanding properties. This work employed the element from alkaline earth metal stabilized Zr to investigate the electrical properties of sol–gel AZrOx...

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Bibliographic Details
Published in:Gels 2021-12, Vol.8 (1), p.20
Main Authors: Lee, Ke-Jing, Wang, Yeong-Her
Format: Article
Language:English
Subjects:
alkaline earth metal
Alkaline earth metals
Atomic radius
Atoms & subatomic particles
Barium
Carbon
Density
Earth
Electrical properties
Glass substrates
High resistance
Insulators
Magnesium
memory
Memory devices
Metal oxides
oxygen vacancy
Random access memory
resistive switching
Sol-gel processes
sol–gel
Strontium
Surface roughness
Thin films
Vacancies
Zirconium
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Summary:Zr can be stabilized by the element selected, such as Mg-stabilized Zr (MSZ), thus providing MSZ thin films with potentially wide applications and outstanding properties. This work employed the element from alkaline earth metal stabilized Zr to investigate the electrical properties of sol–gel AZrOx (A = alkaline earth metal; Mg, Sr, Ba) as dielectric layer in metal-insulator–metal resistive random-access memory devices. In addition, the Hume–Rothery rule was used to calculate the different atomic radii of elements. The results show that the hydrolyzed particles, surface roughness, and density of oxygen vacancy decreased with decreased difference in atomic radius between Zr and alkaline earth metal. The MgZrOx (MZO) thin film has fewer particles, smoother surface, and less density of oxygen vacancy than the SrZrOx (SZO) and BaZrOx (BZO) thin films, leading to the lower high resistance state (HRS) current and higher ON/OFF ratio. Thus, a suitable element selection for the sol–gel AZrOx memory devices is helpful for reducing the HRS current and improving the ON/OFF ratio. These results were obtained possibly because Mg has a similar atomic radius as Zr and the MgOx-stabilized ZrOx.
ISSN:2310-2861
2310-2861
DOI:10.3390/gels8010020