Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walle...

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Bibliographic Details
Published in:Nanoscale research letters 2011-01, Vol.6 (1), p.88-88, Article 88
Main Authors: Stavarache, Ionel, Lepadatu, Ana-Maria, Teodorescu, Valentin Serban, Ciurea, Magdalena Lidia, Iancu, Vladimir, Dragoman, Mircea, Konstantinidis, George, Buiculescu, Raluca
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
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Summary:The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I - V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/1556-276X-6-88