Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

Phosphorus-doped amorphous silicon carbide films were prepared using a polymeric precursor solution. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage, providing semiconducting properties in the films. The valence and...

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Bibliographic Details
Published in:AIP advances 2016-05, Vol.6 (5), p.055021-055021-6
Main Authors: Murakami, Tatsuya, Masuda, Takashi, Inoue, Satoshi, Yano, Hiroshi, Iwamuro, Noriyuki, Shimoda, Tatsuya
Format: Article
Language:English
Subjects:
ABUNDANCE
Amorphous materials
Amorphous silicon
Carbon
CATALYSTS
Chemical synthesis
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Crosslinking
DOPED MATERIALS
ENERGY GAP
EVALUATION
LIQUIDS
OXIDATION
PHOSPHORUS
Photoelectric emission
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
POLYMERS
Prepolymers
Silicon carbide
SILICON CARBIDES
Spectrum analysis
SYNTHESIS
VALENCE
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Summary:Phosphorus-doped amorphous silicon carbide films were prepared using a polymeric precursor solution. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage, providing semiconducting properties in the films. The valence and conduction states of resultant films were determined directly through the combination of inverse photoemission spectroscopy and photoelectron yield spectroscopy. The incorporated carbon widened energy gap and optical gap comparably in the films with lower carbon concentrations. In contrast, a large deviation between the energy gap and the optical gap was observed at higher carbon contents because of exponential widening of the band tail.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4952592