Frequency upshift via flash ionization phenomena using semiconductor plasma

We have demonstrated frequency upshift in the terahertz region by flash ionization. The magnitude of upshift frequency is tuned by the laser intensity. A proof of principle experiment has been performed with a plasma creation time scale much shorter than the period of the electromagnetic wave and a...

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Published in:EPJ Web of conferences 2013-01, Vol.59, p.19004-np
Main Authors: Nishida, A., Nakata, M., Oba, T., Higashiguchi, T., Yugami, N., Sentoku, Y., Kodama, R.
Format: Article
Language:English
Subjects:
Crystals
Electromagnetic waves
Ionization
Lasers
Semiconductor plasmas
Time
Wavelengths
Zinc selenides
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description We have demonstrated frequency upshift in the terahertz region by flash ionization. The magnitude of upshift frequency is tuned by the laser intensity. A proof of principle experiment has been performed with a plasma creation time scale much shorter than the period of the electromagnetic wave and a plasma length longer than its wavelength. Frequency upshifted from 0.35 to 3.5THz by irradiating a ZnSe crystal with a ultra-short laser pulse has been observed.
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subjects Crystals
Electromagnetic waves
Ionization
Lasers
Semiconductor plasmas
Time
Wavelengths
Zinc selenides
title Frequency upshift via flash ionization phenomena using semiconductor plasma
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