Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction

• Published in: Results in physics 2019-06, Vol.13, p.102308, Article 102308
• Main Authors: Li, Xiaoxia, Sun, Bai, Hou, Wentao, Chen, Jiao, Zheng, Pingping, Mao, Shuangsuo, Zhu, Shouhui, Xia, Yudong, Fu, Guoqiang
• Format: Article
• Language: English
• Subjects: BiFeO3; Cu2ZnSnSe4; Environmental factors; Heterojunction; Memory device; Resistance switching
• ISSN: 2211-3797; 2211-3797
• DOI: 10.1016/j.rinp.2019.102308

[Display omitted] •A resistive switching memory device based on BFO/CZTSe heterostructure was demonstrated.•It is observed an environmental factors controlled memory behavior.•A mechanism based on the tunneling of interfacial carriers induced filament formation is used to explain the switching behavior.•This work demonstrates that the constructed resistive switching memory device displays superior application value in complex environments. With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is demonstrated, further the resistive switching characteristics of as-prepared device are characterized under different testing environments, suggesting an environmental factors controlled memory behavior is observed. Finally, we propose a new mechanism to explain the resistive switching effect based on the tunneling of interfacial carriers induced filament formation. This work demonstrates that the resistive switching memory device constructed by advanced semiconductor heterostructure display superior application value because they can work in complex environments.