High‐Sensitive and Fast Speed UV Photodetector Based on HfSe2/InSe Heterostructure

• Published in: Advanced Sensor Research 2023-12, Vol.2 (12), p.n/a
• Main Authors: Zhang, Chengcheng, Zhang, Shiji, Ding, Jingzu, Wang, Wenhui, Cao, Zhangyu, Han, Tao, Li, Feng, Zhu, Xiangde, Shan, Lei, Long, Mingsheng
• Format: Article
• Language: English
• Subjects: Bias; Decay rate; Efficiency; Electrodes; Electrons; heterostructure; Heterostructures; HfSe2; InSe; Lasers; Light emitting diodes; Low noise; Performance evaluation; photodetector; Photometers; solar blind UV; Spectrum analysis; Ultraviolet radiation
• ISSN: 2751-1219; 2751-1219
• DOI: 10.1002/adsr.202300076

The type‐II band‐aligned van der Waals (vdW) heterostructures are favorable for photocarrier separation and are often used for designing high‐performance photodetectors. Inspired by this, a metal‐mirror electrode enhanced HfSe2‐InSe vdW heterostructure photodetector is designed and demonstrated excitement performance in UV light detection. It is demonstrated the moderate bandgap heterostructure can be configured as a high‐performance UV photodetector with excellent light on/off ratio of 106, high photoresponsivity of 47.3 AW−1, competitive high specific detectivity of 3.2 × 1012 cmHz1/2W−1 and very low noise equivalent power of 2.8 × 10−16 WHz−1/2. Notably, the photoresponse speed of the device is very fast, with a rise time of 4.1 µs and a decay time of 5.4 µs. The results indicate that 2D HfSe2‐InSe vdW heterostructure possesses great potential applications in UV photodetection. It is designed a vertical HfSe2/InSe van der Waals heterodiode, which demonstrates high photoresponsivity of 47.3 AW‐1, high D* of 3.2x1012 cmHz1/2W‐1, and very low noise equivalent power of 2.8x10‐16 WHz‐1/2 for solar‐blind ultraviolet detection. The device exbibits ultrafast photoresponse speed with a rising time of 4.1 µs decay time of 5.4 µs and competitive high light on/off ratio up to 107.